complementary darlington silicon power transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. ? high dc current gain @ 10 adc e h fe = 400 min (all types) ? collectoremitter sustaining voltage v ceo(sus) = 150 vdc (min) e mjh11018, 17 = 200 vdc (min) e mjh11020, 19 = 250 vdc (min) e mjh11022, 21 ? low collectoremitter saturation voltage v ce(sat) = 1.2 v (typ) @ i c = 5.0 a = 1.8 v (typ) @ i c = 10 a ? monolithic construction ??????????????????????? ??????????????????????? maximum ratings ??????????? ??????????? ???? ???? ???????? ???????? mjh ??? ??? ??????????? ??????????? rating ???? ???? symbol ??? ??? 11018 11017 ???? ???? 11020 11019 ??? ??? 11022 11021 ??? ??? unit ??????????? ??????????? collectoremitter voltage ???? ???? v ceo ??? ??? 150 ???? ???? 200 ??? ??? 250 ??? ??? vdc ??????????? ??????????? collectorbase voltage ???? ???? v cb ??? ??? 150 ???? ???? 200 ??? ??? 250 ??? ??? vdc ??????????? ??????????? emitterbase voltage ???? ???? v eb ???????? ???????? 5.0 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous e peak (1) ???? ? ?? ? ???? i c ???????? ? ?????? ? ???????? 15 30 ??? ? ? ? ??? adc ??????????? ??????????? base current ???? ???? i b ???????? ???????? 0.5 ??? ??? adc ??????????? ??????????? total device dissipation @ t c = 25 c derate above 25 c ???? ???? p d ???????? ???????? 150 1.2 ??? ??? watts w/ c ??????????? ? ????????? ? ??????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???????? ? ?????? ? ???????? 65 to + 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance. junction to case ????? ????? r q jc ?????? ?????? 0.83 ??? ??? c/w (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 4 1 publication order number: mjh11017/d mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 15 ampere darlington complementary silicon power transistors 150, 200, 250 volts 150 watts *on semiconductor preferred device * pnp npn case 340d02 * * * * *
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 2 p d , power dissipation (watts) 160 0 t c , case temperature ( c) 40 60 100 120 160 80 140 20 figure 1. power derating 0 20 40 60 80 100 140 120
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? symbol ???? ???? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collectoremitter sustaining voltage (1) (i c = 0.1 adc, i b = 0) mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 ????? ? ??? ? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ? ?? ? ???? 150 200 250 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collector cutoff current (v ce = 75 vdc, i b = 0) mjh11017, mjh11018 (v ce = 100 vdc, i b = 0) mjh11019, mjh11020 (v ce = 125 vdc, i b = 0) mjh11021, mjh11022 ????? ? ??? ? ? ??? ? ????? i ceo ???? ? ?? ? ? ?? ? ???? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? madc ????????????????????? ? ??????????????????? ? ????????????????????? collector cutoff current (v ce = rated v cb , v be(off) = 1.5 vdc) (v ce = rated v cb , v be(off) = 1.5 vdc, t j = 150 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e e ???? ? ?? ? ???? 0.5 5.0 ??? ? ? ? ??? madc ????????????????????? ????????????????????? emitter cutoff current (v be = 5.0 vdc i c = 0) ????? ????? i ebo ???? ???? e ???? ???? 2.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ????????????????????? ????????????????????? dc current gain (i c = 10 adc, v ce = 5.0 vdc) ????? ????? h fe ???? ???? 400 ???? ???? 15,000 ??? ??? e ????????????????????? dc current gain (i c = 10 adc , v ce = 5 . 0 vdc) dc current gain (i c =15adc v ce = 5 0 vdc) ????? h fe ???? 400 100 ???? 15 , 000 e ??? e ????????????????????? ????????????????????? dc c urren t g a i n (i c = 15 ad c, v ce = 5 . 0 vd c ) ????? ????? ???? ???? 100 ???? ???? e ??? ??? ????????????????????? ????????????????????? collectoremitter saturation voltage (i c = 10 adc, i b = 100 ma) collectoremitter saturation voltage (i c = 15 adc, i b = 150 ma) ????? ????? v ce(sat) ???? ???? e e ???? ???? 2.5 4.0 ??? ??? vdc ????????????????????? ????????????????????? baseemitter on voltage (i c = 10 a, v ce = 5.0 vdc) ????? ????? v be(on) ???? ???? e ???? ???? 2.8 ??? ??? vdc ????????????????????? ????????????????????? baseemitter saturation voltage (i c = 15 adc, i b = 150 ma) ????? ????? v be(sat) ???? ???? e ???? ???? 3.8 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ? ??????????????????? ? ????????????????????? currentgain bandwidth product (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? 3.0 ???? ? ?? ? ???? e ??? ? ? ? ??? e ????????????????????? ????????????????????? output capacitance mjh11018, mjh11020, mjh11022 (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjh11017, mjh11019, mjh11021 ????? ????? c ob ???? ???? e e ???? ???? 400 600 ??? ??? pf ????????????????????? ????????????????????? smallsignal current gain (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 khz) ????? ????? h fe ???? ???? 75 ???? ???? e ??? ??? e ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????? ????????????????????? ????? ????? ??????? ??????? typical ??? ??? ????????????????????? ????????????????????? characteristic ????? ????? symbol ???? ???? npn ???? ???? pnp ??? ??? unit ??????????? ??????????? delay time ??????????? ??????????? ????? ????? t d ???? ???? 150 ???? ???? 75 ??? ??? ns ??????????? ??????????? rise time ??????????? ??????????? (v cc = 100 v, i c = 10 a, i b = 100 ma ????? ????? t r ???? ???? 1.2 ???? ???? 0.5 ??? ??? m s ??????????? ??????????? storage time ??????????? ??????????? (v cc 100 v , i c 10 a , i b 100 ma v be(off) = 5.0 v) (see figure 2) ????? ????? t s ???? ???? 4.4 ???? ???? 2.7 ??? ??? m s ??????????? ??????????? fall time ??????????? ??????????? ????? ????? t f ???? ???? 2.5 ???? ???? 2.5 ??? ??? m s (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. figure 2. switching times test circuit r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t r , t f 10 ns duty cycle = 1.0% for t d and t r , d 1 is disconnected and v2 = 0 for npn test circuit, reverse diode and voltage polarities. v2 approx +12 v 0 v1 approx -8.0 v v cc 100 v tut scope r b +4.0 v d 1 51 r c 25 m s
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 4 figure 3. thermal response t, time (ms) 1.0 0.01 0.02 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1.0 2.0 5.0 10 20 50 100 200 500 r q jc (t) = r(t) r q jc r q jc = 0.83 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.1 0.5 0.2 resistance (normalized) 1000 0.5 0.3 0.07 0.03 0.01 0.03 3.0 30 300 0.3 0.2 0.1 0.05 0.02 0.01 wire bond limit thermal limit second breakdown limit 0.5 ms figure 4. maximum rated forward bias safe operating area (fbsoa) 1.0 ms 5.0 ms 0.1 ms dc v ce , collector-emitter voltage (volts) 2.0 30 2.0 i c , collector current (amps) 3.0 10 10 0.5 0.2 5.0 20 1.0 20 100 0 t c = 25 c single pulse 5.0 50 250 150 30 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 3. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v ce , collector-emitter voltage (volts) 20 30 140 i c , collector current (amps) 60 180 100 10 20 260 220 0 figure 5. maximum rated reverse bias safe operating area (rbsoa) l = 200 m h i c /i b1 50 t c = 100 c v be(off) = 0-5.0 v r be = 47 w duty cycle = 10% 0 mjh11017, mjh11018 mjh11019, mjh11020 mjh11021, mjh11022 reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent conditions during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 5 gives rbsoa characteristics.
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 5 voltage (volts) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) t c = 150 c i b , base current (ma) 1000 3000 2000 5000 7000 10,000 pnp npn 1.0 1.0 2.0 5.0 3.0 2.5 4.0 3.5 3.0 10 30 4.5 2.0 50 100 i c = 15 a figure 6. dc current gain 0.2 15 3.0 1.0 0.5 5.0 10 0.3 20 h fe , dc current gain t c = 150 c 25 c -55 c v ce = 5.0 v i c , collector current (amps) figure 7. collector saturation region figure 8. aono voltages 1.5 300 500 1000 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 3.0 2.5 voltage (volts) 4.0 3.5 2.0 0.5 0.2 0.5 5.0 0.3 1.0 0.7 3.0 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 7.0 2.0 10 20 100 h fe , dc current gain i c , collector current (amps) i b , base current (ma) 1.0 2.0 5.0 3.0 10 30 50 100 i c = 15 a 20 300 500 200 t j = 25 c i c = 10 a i c = 5.0 a i c , collector current (amps) 1.5 1.0 1000 pnp npn pnp npn pnp npn 500 200 0.7 1000 2000 5000 10,000 0.2 15 3.0 1.0 0.5 5.0 10 0.3 7.0 25 c -55 c v ce = 5.0 v 100 500 200 0.7 3.0 2.5 4.0 3.5 2.0 0.5 0.2 0.5 5.0 1.0 0.7 t j = 25 c v be(sat) @ i c /i b = 100 v be @ v ce = 5.0 v v ce(sat) @ i c /i b = 100 2.0 10 20 1.5 1.0 1.0 3.0 2.5 4.0 3.5 4.5 2.0 1.5
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 6 base emitter collector base emitter collector pnp npn figure 9. darlington schematic mjh11018 mjh11020 mjh11022 mjh11017 mjh11019 mjh11021
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 7 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
mjh11017 mjh11019 mjh11021 mjh11018 mjh11020 mjh11022 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjh11017/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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